PART |
Description |
Maker |
HMT351S6CFR8A HMT351S6CFR8A-G7 HMT351S6CFR8A-H9 HM |
DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb C-die
|
Hynix Semiconductor
|
EBJ21UE8BDF0-AE-F EBJ21UE8BDF0-DJ-F EBJ21UE8BDF0-G |
2GB Unbuffered DDR3 SDRAM DIMM
|
Elpida Memory
|
SGL08G72B1BE2MT-CCRT SGL08G72B1BE2MT-DCRT |
8GB DDR3 ?SDRAM unbuffered ECC Mini-UDIMM
|
List of Unclassifed Manufacturers
|
HMT164U6BFR6C HMT164U6BFR6C-G7 HMT164U6BFR6C-H9 HM |
240pin DDR3 SDRAM Unbuffered DIMMs 256M X 64 DDR DRAM MODULE, 20 ns, DMA240
|
http:// HYNIX SEMICONDUCTOR INC
|
EBJ21EE8BAWA-8C-E EBJ21EE8BAWA-AE-E EBJ21EE8BAWA-D |
256M X 72 DDR DRAM MODULE, DMA240 2GB Unbuffered DDR3 SDRAM DIMM
|
ELPIDA MEMORY INC
|
M374S6453CTS-L7C M347S6453CTS-C1H M347S6453CTS-C1L |
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒 512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a> 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
EDJ1108DJBG-JS-F EDJ1116DJBG-JS-F EDJ1116DJBG-DJ-F |
Differential clock inputs 1G bits DDR3 SDRAM 1G bits DDR3 SDRAM
|
Elpida Memory
|
HYMD232726CL8-H HYMD232726CL8-K HYMD232726CL8-L HY |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|
MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
HYMD264646B8-H HYMD264646B8-K HYMD264646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM 64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|